2SK3065T100

Electronic & Electrical Components

> Semiconductors - Discretes

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Series Information for 2SK3065T100 - Rohm

Features

  • feature
    1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel !External dimensions (Units : mm) ROHM : MPT3 E I A J : SC-62 (1) Gate (2) Drain (3) Source u22120.1 +0.2 u22120.05 +0.1 +0.2 u22120.1 (3) (2) (1) 1.0u00b10.3 0.5u00b10.1 2.5 3.0u00b10.2 1.5u00b10.1 1.5u00b10.1 0.4u00b10.1 0.5u00b10.1 0.4u00b10.1 0.4 1.5u00b10.1 4.5 1.6u00b10.1 Abbreviated symbol : KE +0.5 u22120.3 4.0 MOS FET transistor !Absolute maximum ratings (Ta = 25u00b0C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation(Tc=25u00b0C) Channel temperature Storage temperature VDSS VGSS IDR PD Tch 60 V V A A W u00b0C u00b120 2 ID IDRP u22171 A IDP u22171 Continuous Pulsed Continuous Pulsed A 8 2 8 150 Tstg u00b0C u221255u223c+150 Symbol Limits Unit u22171 Pw u2264 10u00b5s, Duty cycle u2264 1% u22172 When mounted on a 40 u00d7 40 u00d7 0.7 mm alumina board. Reverse drain current 2u22172 0.5 !Internal equivalent circuit Drain Source Gate u2217Gate Protection Diode u2217 A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. !Electrical characteristics (Ta = 25u00b0C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Test Conditions VGS = 0V f = 1MHz VDS = 10V VGS = 4V ID = 1A, VDD 30V RL = 30u2126 RG = 10u2126 u00b5A pF u2126 u2126 S Unit V u00b5A V pF pF ns ns ns ns ID = 1A, VGS = 4V u2212 u2212 60 u2212 0.8 u2212 1.5 Min. u2212 u2212 u2212 u2212 u2212 u2212 u2212 160 u2212 u2212 u2212 u2212 u2212 0.25 u2212 Typ. 85 25 20 50 120 70 0.35 u2212 u00b110 10 1.5 0.32 u2212 Max. u2212 u2212 u2212 u2212 u2212 u2212 0.45 ID = 1A, VGS = 2.5V ID = 1A, VDS = 10V ID = 1mA, VGS = 0V VGS = u00b120V, VDS = 0V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA IGSS IDSS uf8e6Yfsuf8e6u2217 Ciss Symbol Coss Crss tr tf V(BR)DSS VGS(th) RDS(on) RDS(on) td(on) td(off) u2217 Pw u2264 300u00b5s, Duty cycle u2264 1% Static drain-source on-state resistance

Description

MOSFET N CH 60V 2A SOT-89

Specifications

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.25ohm
Rds(on) Test Voltage Vgs:
4V
Threshold Voltage Vgs:
800mV
Power Dissipation Pd:
500mW
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Current Id Max:
2A
Voltage Vgs Max:
20V

Alternate Descriptions

Avnet America

Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) MPT T/R

Avnet America product

Avnet Europe

Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) MPT T/R

Avnet Europe product

Avnet Asia

Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) MPT T/R

Avnet Asia product

Future Electronics

Single N-Channel 500 mW 60 V 0.45 Ohm Surface Mount MosFet - SC-62