2SC5866TLQ

Semiconductors - Discretes

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> Bipolar Transistors

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Series Information for 2SC5866TLQ - Rohm

Features

  • feature
    1)High speed switching. (tf:Typ.:35ns at IC=2A) 2)Low saturation voltage, typically (Typ.:200mV at IC=1.0A, IB=100mA) 3)Storong discharge power for inductive load and capacitance load. 4)Complements the 2SA2094

Description

TRANSISTOR

Specifications

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
500mW
DC Collector Current:
1A
DC Current Gain hFE:
120hFE
Transistor Case Style:
TSMT
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Collector Emitter Saturation Voltage Vce(on):
500mV
Current Ic Continuous a Max:
1A
Gain Bandwidth ft Typ:
200MHz
Hfe Min:
120
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Termination Type:
Surface Mount Device
Transistor Type:
Power Bipolar

Alternate Descriptions

Avnet America

Trans GP BJT NPN 60V 2A 3-Pin TSMT T/R

Avnet Europe

Trans GP BJT NPN 60V 2A 3-Pin TSMT T/R

Future Electronics

2SC5866 Series 60 V 2 A NPN Surface Mount Middle Power Transistor - TSMT3