2SB1386T100R

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Series Information for 2SB1386T100R - Rohm

Features

  • feature
    1) Low VCE(sat). VCE(sat) = u22120.35V (Typ.) (IC/IB = u22124A/ u22120.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097.

Description

TRANSISTOR PNP 20V SC-62

Specifications

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
20V
Transition Frequency ft:
120MHz
Power Dissipation Pd:
500mW
DC Collector Current:
4A
DC Current Gain hFE:
82hFE
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jan-2018)
Collector Emitter Saturation Voltage Vce(on):
1V
Current Ic Continuous a Max:
4A
Gain Bandwidth ft Typ:
120MHz
Hfe Min:
180
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Termination Type:
Surface Mount Device
Transistor Type:
Low Saturation (BISS)

Alternate Descriptions

Avnet America

Trans GP BJT PNP 20V 5A 4-Pin(3+Tab) MPT T/R

Avnet America product

Avnet Europe

Trans GP BJT PNP 20V 5A 4-Pin(3+Tab) MPT T/R

Avnet Europe product

Avnet Asia

Trans GP BJT PNP 20V 5A 4-Pin(3+Tab) MPT T/R

Avnet Asia product

Future Electronics

2SB1386 Series 20 V 5 A SMT PNP Low Frequency Transistor - SC-62