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Details for 2N6660-E3 by Vishay Intertechnology
Electronic & Electrical Components > Semiconductors - Discretes > Transistors
MOSFET N CH 60V 0.99A TO-205AD
2N6660-E3 image

2N6660-E3 by Vishay Intertechnology

MOSFET N CH 60V 0.99A TO-205AD
Features
- Military Qualified - Low On-Resistence: 1.3 uf057 - Low Threshold: 1.7 V - Low Input Capacitance: 35 pF - Fast Switching Speed: 8 ns - Low Input and Output Leakage BENEFITS - Guaranteed Reliability - Low Offset Voltage - Low-Voltage Operation - Easily Driven Without Buffer - High-Speed Circuits - Low Error Voltage
Part Information
2N6660-E3 image
RoHS Compliant
Specifications
Transistor Polarity:
N Channel
Continuous Drain Current Id:
990mA
Drain Source Voltage Vds:
75V
On Resistance Rds(on):
1.3ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.7V
Power Dissipation Pd:
725mW
Transistor Case Style:
TO-205AD
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
Operating Temperature Min:
-55°C
Operating Temperature Range:
-55°C to +150°C
Alternate Descriptions
N CHANNEL MOSFET, 60V, 1.1A, TO-205AD; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; On Resistance Rds(on):1.3ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:-RoHS Compliant: Yes Newark Electronics