Operating from a 28V rail, CG2H40xx/30xx RF Power GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making both transistors ideal for linear and compressed amplifier circuits. Push the limits of what’s possible with ever‑increasing power density and reliability in designing even smaller RF and microwave applications.

Wolfspeed / Cree CG2H40xx and CG2H30xx GaN (Gallium Nitride) HEMTs are High Electron Mobility Transistors designed to operate from a 28V rail. The CG2H40xx and CG2H30xx Transistors offer a general purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make it ideal for linear and compressed amplifier circuits.

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The CG2H40xx and CG2H30xx transistors are available in a wide variety of package types for design flexibility, including screw down, solder down, pill, and flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.

Features:

  • High Efficiency
  • High Gain
  • Wide Bandwidth Capabilities
  • Rugged Design for Long, Reliable Operation

Specifications:

  • Drain-Source Voltage (VDSS): 120V @ 25˚C
  • Gate-to-Source Voltage (VGS): -10V to +2V
  • Storage Temperature (TSTG): -65˚C to +150˚C
  • Operating Junction Temperature (TJ): 225˚C
  • Case Operating Temperature (TC): -40˚C to +150˚C

Applications:

  • Broadband Amplifiers
  • Cellular Infrastructure
  • Radar
  • Test Instrumentation

Wolfspeed / Cree CG2H40xx and CG2H30xx Test Boards provide a demonstration and evaluation platform for the CG2H40xx and CG2H30xx GaN HEMTs. Each provides an example amplifier circuit specifically tailored to the target device.

Published: March 12, 2021